Method of making a semiconductor structure useful in making...

Details Method of making a semiconductor structure useful in making... Method of making a semiconductor structure useful in making...

2011-07-26

2011-07-26

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S264000, C438S283000, C438S287000, C438S288000, C257SE21179, C257SE21180, C257SE21209, C257SE21210

Reexamination Certificate

active

07985649

ABSTRACT:
A method of making a semiconductor device on a semiconductor layer is provided. The method includes: forming a select gate dielectric layer over the semiconductor layer; forming a select gate layer over the select gate dielectric layer; and forming a sidewall of the select gate layer by removing at least a portion of the select gate layer. The method further includes growing a sacrificial layer on at least a portion of the sidewall of the select gate layer and under at least a portion of the select gate layer and removing the sacrificial layer to expose a surface of the at least portion of the sidewall of the select gate layer and a surface of the semiconductor layer under the select gate layer. The method further includes forming a control gate dielectric layer, a charge storage layer, and a control gate layer.

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