Method of making a semiconductor structure

Details Method of making a semiconductor structure Method of making a semiconductor structure

2006-11-14

2006-11-14

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S582000, C438S656000, C438S683000, C438S685000, C438S687000, C438S785000, C257S459000, C257S503000, C257S762000, C257S779000, C106S014050, C252S387000, C392S457000, C205S350000

Reexamination Certificate

active

07135396

ABSTRACT:
Methods of making a semiconductor structure are disclosed. A refractory metal layer containing W, TiW, Ta, or TaN and semiconductor layer are formed on a substrate that contains copper in, for example, a via therein. A portion of the refractory metal layer and semiconductor layer is removed by etching using a fluorine-containing compound. By using W, TiW, Ta, or TaN as the refractory metal layer material and employing fluorine-based etching, the copper portion in the substrate is not substantially etched, thus preventing corrosion of the copper portion.

REFERENCES:
patent: 5882489 (1999-03-01), Bersin et al.
patent: 6656763 (2003-12-01), Oglesby et al.
patent: 6686263 (2004-02-01), Lopatin et al.
patent: 6746947 (2004-06-01), Daubenspeck et al.
patent: 6746971 (2004-06-01), Ngo et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.
patent: 6753954 (2004-06-01), Chen
patent: 6768157 (2004-07-01), Krieger et al.
patent: 6770905 (2004-08-01), Buynoski et al.
patent: 6781868 (2004-08-01), Bulovic et al.
patent: 6787458 (2004-09-01), Tripsas et al.
patent: 2003/0064578 (2003-04-01), Nakamura et al.
patent: 2003/0082850 (2003-05-01), Akram
patent: 2003/0203706 (2003-10-01), Shih et al.
patent: 2004/0000580 (2004-01-01), Lee et al.
patent: 2005/0059232 (2005-03-01), Andreas
patent: 2006/0016861 (2006-01-01), Daubenspeck et al.
patent: 2006/0163582 (2006-07-01), Lee et al.
Kaori Tai, “New Complementary PVD-Ta/CVD-WN Stacked Barrier Structure for Copper Metallization”, IEEE 2002, p. 194-196.

Affiliated with

Also associated with

Rating

Method of making a semiconductor structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3644827