Method of making a semiconductor memory device with improved cap

Details Method of making a semiconductor memory device with improved cap Method of making a semiconductor memory device with improved cap

1996-02-14

1998-03-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 438253, H01L 218242

Patent

active

057286167

ABSTRACT:
There is provided a semiconductor device, including: a semiconductor substrate having a major surface; a first insulating film formed on the major surface of the semiconductor substrate; a plurality of first conductive members spaced apart from each other on the first insulating film and formed to be connected to the semiconductor substrate; a plurality of storage electrodes formed on the first insulating film at positions respectively corresponding to the first conductive members; a plurality of high-permittivity films respectively stacked on the plurality of storage electrodes; a plurality of first counter electrodes respectively stacked on the plurality of high-permittivity films; a second insulating film, having a permittivity much lower than a permittivity of each of the high-permittivity films, for insulating the first conductive members, the high-permittivity films, and the first counter electrodes, respectively; and a second counter electrode, formed on the second insulating film, for connecting adjacent first counter electrodes on an upper surface of the second counter electrode, and a method of manufacturing the semiconductor device.

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Koyama et al., "A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TIO.sub.3 for 256M DRAM", IEDM Technical Digest, 1991, pp. 823-826.
Japanese Unexamined Patent Publication No. 242971/92, published Aug. 31, 1992.

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