Method of making a semiconductor memory circuit device

Details Method of making a semiconductor memory circuit device Method of making a semiconductor memory circuit device

1994-10-18

1997-05-20

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438396, H01L 218242

Patent

active

056311826

ABSTRACT:
In a semiconductor memory circuit device wherein each memory cell is constituted by a series circuit of a memory cell selecting MISFET and an information storing capacitor of a stacked structure, there are present in a first region as a memory cell array region a first MISFET having a gate electrode and source and drain regions; first and second capacity electrodes and a dielectric film extending onto a first insulating film on the gate electrode; a second insulating film positioned on the second capacity electrode; and a first wiring positioned on the second insulating film, while in a second region as a peripheral circuit region there are present a second MISFET having a gate electrode and source and drain regions; a first insulating film on the gate electrode; a third insulating film on the first insulating film; a second insulating film on the third insulating film; and a second wiring on the second insulating film.

REFERENCES:
patent: 4882289 (1989-11-01), Moriuchi et al.
patent: 5094965 (1992-03-01), Ozaici et al.
patent: 5120674 (1992-06-01), Chiw et al.
patent: 5202275 (1993-04-01), Sugiura et al.
patent: 5438008 (1995-08-01), Ema

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