Method of making a semiconductor memory array of floating...

Details Method of making a semiconductor memory array of floating... Method of making a semiconductor memory array of floating...

2007-12-04

2010-11-09

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C257S315000, C257SE21422, C257SE27103, C257SE29300, C365S185010, C365S185100

Reexamination Certificate

active

07829404

ABSTRACT:
A memory device, and method of making and operating the same, including a substrate of semiconductor material of a first conductivity type, first and second spaced apart regions in the substrate of a second conductivity type with a channel region therebetween, an electrically conductive floating gate having a first portion disposed over and insulated from the channel region and a second portion disposed over and insulated from the first region and including a sharpened edge, an electrically conductive P/E gate having a first portion disposed over and insulated from the first region and a second portion extending up and over the floating gate second portion and insulated therefrom by a first layer of insulation material, and an electrically conductive select gate having a first portion disposed laterally adjacent to the floating gate and disposed over and insulated from the channel region.

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