Method of making a semiconductor device with dummy diffused...

Details Method of making a semiconductor device with dummy diffused... Method of making a semiconductor device with dummy diffused...

2005-08-02

2005-08-02

Lee, Eddie (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S207000, C438S221000

Reexamination Certificate

active

06924187

ABSTRACT:
A semiconductor device, including a dummy diffused layer in the upper part of a substrate, has its noise immunity improved. The dummy diffused layer is formed between analog and digital blocks to eliminate dishing, which usually occurs during a CMP process for defining STI regions. The surface of the dummy diffused layer is covered with an anti-silicidation film at least partially and a dummy gate electrode so as not to be silicided. The dummy gate electrode can be formed along with a normal gate electrode for a transistor.

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