Method of making a semiconductor device with an etching stopper

Details Method of making a semiconductor device with an etching stopper Method of making a semiconductor device with an etching stopper

1998-08-31

2000-12-19

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438634, H01L 218242

Patent

active

061626767

ABSTRACT:
The invention relates to a semiconductor device and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate, a first etching stopper insulating film, a first insulating interlayer, a pair of first contact holes, first buried conductive layers, a first interconnection formed on one of the first buried conductive layers, a second insulating interlayer, a second contact hole, a second buried conductive layer, and a second interconnection. The first contact holes are formed at a predetermined interval in a direction parallel to the surface of the semiconductor substrate so as to reach a semiconductor element formed on the semiconductor substrate through the first insulating interlayer and the etching stopper insulating film. The second contact hole is formed to reach the other first buried conductive layer through the second insulating interlayer corresponding to a portion above the first buried conductive layer. Each of the first contact holes is constituted by a small-diameter lower contact hole formed in the first etching stopper insulating film and a large-diameter upper contact hole formed in the first insulating interlayer, and the first buried conductive layers do not project from the surface of the first insulating interlayer.

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