Method of making a semiconductor device using chemical-mechanica

Details Method of making a semiconductor device using chemical-mechanica Method of making a semiconductor device using chemical-mechanica

1997-12-01

1999-11-16

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438631, 438633, 438691, 438693, 438734, 438645, H01L 214763

Patent

active

059857480

ABSTRACT:
A method of chemical-mechanical polishing of a semiconductor device utilizes a combination of polishing steps, including a first step using a first slurry containing an abrasive component (i.e., mechanical component) and a chemical component (i.e., chemical reactants), and a second polishing step using a second slurry having a reduced amount of the abrasive component. The method is carried out with respect to metal (39), such as copper, deposited on a dielectric layer (34) and the first polishing step is stopped before the entirety of the metal overlying the dielectric layer is removed. In one embodiment, the second slurry has no abrasive component.

REFERENCES:
patent: 4959113 (1990-09-01), Roberts
patent: 5225034 (1993-07-01), Yu et al.
patent: 5391258 (1995-02-01), Brancaleoni et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5676587 (1997-10-01), Landers
patent: 5700383 (1997-12-01), Feller et al.

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