Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-05-29
2007-05-29
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S508000, C257S737000
Reexamination Certificate
active
11011270
ABSTRACT:
A method of making a semiconductor device by forming bumps on pads of a test piece. The method includes a fastening process of pouring a bump material including a liquid and a plurality of individual pump materials toward a target face of a mask substrate, the mask substrate having a plurality of holding holes, and making bump materials to become fastened to the holding holes; a removing process of removing the individual bump materials remaining on the target face from the target face; and a compression process of compressing the pads of the test piece from the side of the target face of the mask substrate toward the mask substrate so as to bond the individual bump materials onto the pads. By this method, micro bump materials can be accurately attached onto pads on a silicon wafer, or the like, and the size of the mask substrate can be easily increased.
REFERENCES:
patent: 5539153 (1996-07-01), Schwiebert et al.
patent: 5861323 (1999-01-01), Hayes
patent: 2004/0110366 (2004-06-01), MacKay et al.
patent: 11-008272 (1999-01-01), None
patent: 2003-258012 (2003-09-01), None
Cohen Pontani Lieberman & Pavane LLP
Le Dung A.
UMC Japan
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