Method of making a semiconductor device that has copper...

Details Method of making a semiconductor device that has copper... Method of making a semiconductor device that has copper...

2006-12-26

2006-12-26

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000, C438S680000, C438S681000, C257SE21008, C257S584000

Reexamination Certificate

active

07153774

ABSTRACT:
A method of making a semiconductor device is described. That method includes forming a copper containing layer on a substrate, and forming an alloying layer that includes an alloying element on the copper containing layer. After applying heat to cause an intermetallic layer that includes copper and the alloying element to form on the surface of the copper containing layer, a barrier layer is formed on the intermetallic layer.

REFERENCES:
patent: 5614764 (1997-03-01), Baerg et al.
patent: 5904560 (1999-05-01), Brumley
patent: 5909635 (1999-06-01), Marieb et al.
patent: 6147000 (2000-11-01), You et al.
patent: 6191029 (2001-02-01), Hsiao et al.
patent: 6336569 (2002-01-01), Joshi
patent: 6433402 (2002-08-01), Woo et al.
N.E. Meier, et al., “Electromigration Voiding in Argon-Implanted Interconnects”, Mat. Res. Soc. Symp. Proc. vol. 563, pp. 97-102, (1999).

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