Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-18
2007-09-18
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S655000, C438S682000, C438S313000, C438S340000, C438S205000
Reexamination Certificate
active
11304524
ABSTRACT:
A semiconductor device includes a bipolar transistor formed on a semiconductor substrate1,in which a collector region13is formed on the semiconductor substrate1;a first insulating layer31having a first opening51formed in a collector region13is formed on the surface of the semiconductor substrate1;and a base semiconductor layer14B is formed in contact with the collector region through the first opening51.The base semiconductor layer14B is formed such that the edge thereof extends onto the first insulating layer31.An emitter semiconductor layer14E is formed in a predetermined region on the base semiconductor layer; a second insulating layer32is formed on the first insulating layer31covering the edge of the base semiconductor layer14E; a second opening52which opens the contact portion between the emitter semiconductor layer14E and the base semiconductor layer14B and a third opening53which opens a base electrode take-out portion of the base semiconductor layer14B are formed; and a metal silicide layer15is formed on the surface of the aforementioned base semiconductor layer inside the third opening53.A metal silicide layer can be formed in a self-aligned manner in a semiconductor device including a bipolar transistor, and silicide in other semiconductor elements can also be formed being self-aligned.
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Japanese Office Action issued on Jan. 23, 2007.
Lee Eugene
Sonnenschein Nath & Rosenthal LLP
Sony Corporation
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