Method of making a semiconductor device having high performance

Details Method of making a semiconductor device having high performance Method of making a semiconductor device having high performance

1997-12-01

1999-08-17

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438585, 438586, 438591, 438653, 438643, 438687, H01L 21336

Patent

active

059406984

ABSTRACT:
A semiconductor device having a high performance gate electrode structure and a process of fabricating such a device. A semiconductor device in accordance with an embodiment of the invention is formed by forming a gate insulating layer is over a substrate. A diffusion barrier layer is formed over the gate insulating layer and a trench is formed in the diffusion barrier layer. In the trench, a metal gate electrode is formed. The diffusion barrier layer impedes diffusion of the metal gate electrode into the gate insulating layer during, for example, subsequent processing. The gate insulating layer, the barrier layer, and the gate electrode may, for example, be formed from cobalt niobate, tantalum silicon nitride, and copper, respectively. The copper gate electrode and cobalt gate insulating layer can, for example, increase the speed of the semiconductor device as compared to conventional transistors.

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