Method of making a semiconductor device having a strained...

Details Method of making a semiconductor device having a strained... Method of making a semiconductor device having a strained...

2007-01-02

2007-01-02

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S938000

Reexamination Certificate

active

10880685

ABSTRACT:
An implant is performed in the P channel regions, while masking the N channel regions, to deeply amorphize a layer at the surface of a semiconductor layer. After this amphorization step, germanium is implanted into the amorphized layer. The germanium is implanted to a depth that is less than the amorphization depth. This germanium-doped layer that is amorphous is heated so that it is recrystallized. The recrystallization results in a semiconductor layer that is silicon germanium (SiGe) and compressive. P channel transistors are then formed in this recrystallized semiconductor layer. This process can also be applied to the N channel side while masking the P channel side. In such case the implant would preferably be carbon instead of germanium.

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X. Lu and N.W. Chang, “SiGe and SiGeC Surface Allow Formation Using High-dose Implantation and Solid Phase Epitaxy,” 1997 IEEE, pp. 686-689, vol. 0-7803-3289-X/97.

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