Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-15
2006-08-15
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S286000
Reexamination Certificate
active
07091094
ABSTRACT:
The present invention provides a semiconductor device that has reduced a short-channel effect by preventing the effective channel length at the sides of a channel of a transistor from decreasing by forming the length of a gate electrode to be different according to the parts. The semiconductor device according to the present invention includes a semiconductor substrate including active regions where a semiconductor device is to be fabricated and isolation regions for electrically isolating the active regions. A gate electrode is formed to go across the active region. A source and a drain are formed in the active region at both sides of the gate electrode, wherein the length of the gate electrode on the upper surface of the sides of the active region is longer than the length of the gate electrode of the center of the active region.
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Wolf, Stanley; “Silicon Processing for the VLSI Era vol. 2: Process Integration”; pp. 354-356; 1990; Lattice Press; Sunset Beach, CA.
Son Jeong-Hwan
Yang Hyeong-Mo
Fourson George
Hynix / Semiconductor Inc.
Toledo Fernando L.
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