Method of making a semiconductor device force and/or acceleratio

Details Method of making a semiconductor device force and/or acceleratio Method of making a semiconductor device force and/or acceleratio

1997-01-27

1998-11-24

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 50, 438 51, H01L 2100

Patent

active

058405976

ABSTRACT:
A semiconductor device with a force and/or acceleration sensor (12), which has a spring-mass system (14, 16) responsive to the respective quantity to be measured and whose mass (16) bears via at least one resilient support element (14) on a semiconductor substrate (20). The semiconductor substrate (20) and the spring-mass system (14, 16) are integral components of a monocrystalline semiconductor crystal (10) with a IC-compatible structure. The three-dimensional structural form of the spring-mass system (12) is produced by anisotropic semiconductor etching, defined P/N junctions of the semiconductor layer arrangement functioning as etch stop means in order to more particularly create a gap (22) permitting respective movement of the mass (16) between the mass (16) and the semiconductor substrate (20).

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