Method of making a semiconductor device, and semiconductor...

Details Method of making a semiconductor device, and semiconductor... Method of making a semiconductor device, and semiconductor...

2007-12-11

2007-12-11

Pham, Hoai V (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S381000, C438S396000, C257SE21647

Reexamination Certificate

active

11150499

ABSTRACT:
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, 1040, 1640) over the first dielectric material; depositing a second dielectric material (150, 550, 1050, 1650) over the first electrode material; depositing a second electrode material (160, 560, 1060, 1660) over the second dielectric material; patterning the second electrode material to form a top electrode (211, 611, 1111, 1611) of a first capacitor (210, 710, 1310, 1615); and patterning the first electrode material to form atop electrode (221, 721, 1221, 1621) of a second capacitor (220, 720, 1320, 1625), to form an electrode (212, 712, 1212, 1612) of the first capacitor, and to define a resistor (230, 730, 1330).

REFERENCES:
patent: 6466427 (2002-10-01), Chen
patent: 6838717 (2005-01-01), Yen et al.
patent: 6902981 (2005-06-01), Ng et al.

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