Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1998-05-04

2000-08-01

Smith, Matthew

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438273, 438212, 257336, 257339, 257342, 257343, 257335, H01L 21336

Patent

active

060966068

ABSTRACT:
A semiconductor device (10) is formed in a semiconductor substrate (11) and an epitaxial layer (14). The semiconductor device includes a p-type body region (16), a source region (17), a channel region (19), and a drain region (102) formed in the epitaxial layer (14). Doped regions (20,22) are formed in the epitaxial layer (14) that contain dopant of a conductivity type that is opposite to the epitaxial layer (14). The doped regions (20,22) divide the epitaxial layer (14) to provide or define doped regions (21,23). The doped regions (20,22) are formed from a plurality of doped regions (30,31,32,33) that can be formed with high energy implants.

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patent: 5689128 (1997-11-01), Hshieh et al.
patent: 5814858 (1998-09-01), Williams
S. Wolf, Silicon Processing for the VLSI Era, vol. 2 Process Integration, pp. 486-489, Lattice Press, 1990.

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