Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-23
2000-07-18
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438637, 438639, 438629, 438643, 438653, 438791, 438769, 438775, 438792, H01L 214763
Patent
active
060906995
ABSTRACT:
A method of making a semiconductor device includes a semiconductor substrate in which a semiconductor element is formed, an interlayer insulating film formed on the semiconductor substrate, an insulating barrier layer, formed on the interlayer insulating film by plasma nitriding, for preventing diffusion of a metal constituting a wiring layer, a conductive barrier layer, formed on the insulating barrier layer, for preventing diffusion of the metal, and a wiring layer formed of the metal on the conductive barrier layer. A bottom portion of the wiring layer is protected by the conductive barrier layer and the insulating barrier layer. Therefore, the diffusion of the metal constituting the wiring layer can be surely prevented.
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Aoyama Hisako
Aoyama Tomonori
Hayashi Hisataka
Iijima Tadashi
Minamihaba Gaku
Gurley Lynne A.
Kabushiki Kaisha Toshiba
Niebling John F.
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