Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-03
2000-02-08
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438396, 438253, 257310, 257295, 257306, 257308, 257311, H01L 218242
Patent
active
060227737
ABSTRACT:
There is provided a semiconductor device, including: a semiconductor substrate having a major surface; a first insulating film formed on the major surface of the semiconductor substrate; a plurality of first conductive members spaced apart from each other on the first insulating film and formed to be connected to the semiconductor substrate; a plurality of storage electrodes formed on the first insulating film at positions respectively corresponding to the first conductive members; a plurality of high-permittivity films respectively stacked on the plurality of storage electrodes; a plurality of first counter electrodes respectively stacked on the plurality of high-permittivity films; a second insulating film, having a permittivity much lower than a permittivity of each of the high-permittivity films, for insulating the first conductive members, the high-permittivity films, and the first counter electrodes, respectively; and a second counter electrode, formed on the second insulating film, for connecting adjacent first counter electrodes on an upper surface of the second counter electrode, and a method of manufacturing the semiconductor device.
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Gurley Lynne A.
NEC Corporation
Niebling John F.
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