Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

1996-11-05

1998-03-17

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438787, 438790, H01L 2131

Patent

active

057286302

ABSTRACT:
In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

REFERENCES:
patent: 5399441 (1995-03-01), Bearinger et al.
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5530293 (1996-06-01), Cohen et al.
patent: 5534731 (1996-07-01), Cheung
patent: 5548159 (1996-08-01), Jeng

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