Method of making a polysilicon gate conductor of an integrated c

Details Method of making a polysilicon gate conductor of an integrated c Method of making a polysilicon gate conductor of an integrated c

1996-12-06

1999-09-07

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438304, 438305, 438306, 438307, 438585, 438586, H01L 21336

Patent

active

059500913

ABSTRACT:
A gate conductor structure and method for forming the structure are provided whereby the overall gate length can be made with less susceptibility to lithography variations. The gate conductor is produced by defining a sidewall surface region and then forming the gate conductor material on that sidewall surface a closely controlled, defined lateral distance therefrom. The gate conductor length is therefore dependent primarily upon deposition technology rather than both deposition and lithography. Deposition can be controlled at the defined sidewall surface more closely than mask alignment, thin film development and etching processes of conventional designs. The gate conductor is formed from the sidewall surface such that the sidewall surface demonstrates a greater likelihood of forming a thicker sidewall spacer on one surface of the gate conductor than the opposing gate conductor surface. Accordingly, the gate conductor demonstrates asymmetrical sidewall spacer formation and the benefits of a drain area formed a greater distance from the channel than a source area.

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