Method of making a nonvolatile memory device including...

Details Method of making a nonvolatile memory device including... Method of making a nonvolatile memory device including...

2008-07-11

2009-08-25

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S328000, C438S531000

Reexamination Certificate

active

07579232

ABSTRACT:
A method of making a semiconductor device includes forming a pillar shaped semiconductor device surrounded by an insulating layer such that a contact hole in the insulating layer exposes an upper surface of the semiconductor device. The method also includes forming a shadow mask layer over the insulating layer such that a portion of the shadow mask layer overhangs a portion of the contact hole, forming a conductive layer such that a first portion of the conductive layer is located on the upper surface of the semiconductor device exposed in the contact hole and a second portion of the conductive layer is located over the shadow mask layer, and removing the shadow mask layer and the second portion of the conductive layer.

REFERENCES:
patent: 5780908 (1998-07-01), Sekiguchi et al.
patent: 5915167 (1999-06-01), Leedy
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6083787 (2000-07-01), Lee
patent: 6133149 (2000-10-01), Yeh
patent: 6420215 (2002-07-01), Knall et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6952043 (2005-10-01), Vyvoda et al.
patent: 7238607 (2007-07-01), Dunton
patent: 7285464 (2007-10-01), Herner et al.
patent: 2002/0022361 (2002-02-01), Kim et al.
patent: 2004/0137721 (2004-07-01), Lim et al.
patent: 2005/0052915 (2005-03-01), Herner et al.
patent: 2006/0189077 (2006-08-01), Herner et al.
patent: 2006/0249753 (2006-11-01), Herner et al.
patent: 2006/0292301 (2006-12-01), Herner
patent: 2007/0164309 (2007-07-01), Kumar et al.
patent: 2007/0284656 (2007-12-01), Radigan et al.
U.S. Appl. No. 11/819,078, filed Jun. 25, 2007, Herner
U.S. Appl. No. 11/864,205, filed Sep. 28, 2007, Chen et al.

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