Method of making a nonvolatile memory cell using EPROM mask and

Details Method of making a nonvolatile memory cell using EPROM mask and Method of making a nonvolatile memory cell using EPROM mask and

1997-07-09

2000-07-11

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438275, H01L 218236

Patent

active

060872284

ABSTRACT:
The invention relates to a method of automatically shifting from the fabrication of an EPROM cell to the fabrication of a ROM cell, which method is specifically intended for semiconductor electronic circuits having a resident memory and is of the type wherein the structure of at least one memory cell transistor is defined on a semiconductor substrate using photolithographic techniques including an active area and a channel region, the cell being adapted to acquire a logic state selected by the user. Advantageously, the conductivity of the active area is changed to suit the logical contents that the cell is intended to contain.

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