Method of making a nitrided gate dielectric

Details Method of making a nitrided gate dielectric Method of making a nitrided gate dielectric

2008-07-22

2008-07-22

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000, C438S769000, C438S775000

Reexamination Certificate

active

07402472

ABSTRACT:
A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current drive of the transistors that are ultimately formed.

REFERENCES:
patent: 6180437 (2001-01-01), Moghe et al.
patent: 6342437 (2002-01-01), Moore
patent: 6716695 (2004-04-01), Hattangady et al.
patent: 6921703 (2005-07-01), Bevan et al.
patent: 2005/0260357 (2005-11-01), Olsen et al.

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