Method of making a nanoscale electronic device

Details Method of making a nanoscale electronic device Method of making a nanoscale electronic device

2005-09-20

2005-09-20

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S386000, C438S637000, C438S647000, C438S648000, C438S650000, C438S672000

Reexamination Certificate

active

06946336

ABSTRACT:
The present invention relates to a method of making a nanoscale electronic device wherein said device comprises a gap between about 0.1 nm and about 100 nm between at least two conductors, semiconductors or the combination thereof. The method features complete assembly of electrical contacts before addition of a molecular component thereby preserving the integrity of the molecular electronic component and maintaining a well-formed gap. The gap produced is within the nanoscale regime, has uniform width and is further characterized by surfaces that are uniformly smooth.

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