Method of making a multibit non-volatile memory

Details Method of making a multibit non-volatile memory Method of making a multibit non-volatile memory

2007-06-19

2007-06-19

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S266000, C438S593000

Reexamination Certificate

active

11040516

ABSTRACT:
The present invention relates to a method of making a multibit non-volatile memory and especially to a method of making a flash memory such as a fast-programmable Flash EEPROM (Electrically Erasable Programmable Read-Only Memory) device relying on hot-electron injection for programming which is particularly suited for high density low-voltage low-power applications and employs only two polysilicon layers.

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