Method of making a metal oxide semiconductor (MOS) transistor po

Details Method of making a metal oxide semiconductor (MOS) transistor po Method of making a metal oxide semiconductor (MOS) transistor po

1997-10-31

1999-08-10

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438596, 438657, 438683, 438755, H01L 21302, H01L 21336

Patent

active

059373199

ABSTRACT:
A method of fabricating a polysilicon gate 8 in a metal oxide semiconductor (MOS) transistor in an integrated circuit includes providing a metal layer 18, such as cobalt, on the sidewall 12 of the polysilicon gate 8, silicidizing the metal with the polysilicon in the polysilicon gate 8 to form a metal silicide sidewall 20, and removing the metal silicide sidewall 20 by etching.

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patent: 4839309 (1989-06-01), Easter et al.
patent: 5227320 (1993-07-01), Johnson et al.
patent: 5231042 (1993-07-01), Ilderem et al.
patent: 5670794 (1997-09-01), Manning
patent: 5753546 (1998-05-01), Koh et al.
patent: 5814537 (1998-09-01), Maa et al.

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