Method of making a merged device with aligned trench FET and bur

Details Method of making a merged device with aligned trench FET and bur Method of making a merged device with aligned trench FET and bur

1997-06-04

1999-09-28

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438156, 438270, H01L 2100, H01L 2184, H01L 21336

Patent

active

059602775

ABSTRACT:
A merged power device structure, of the emitter-switching type, in which the emitter of the bipolar power transistor has a minimum-width pattern which is aligned to the trenches of a trench control transistor. Thus the current density of the bipolar is maximized, since the emitter edge length per unit area is increased. The parasitic base resistance of the bipolar can also be reduced.

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