Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-03-07
1997-04-29
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438586, 438128, H01L 218246
Patent
active
056248628
ABSTRACT:
The mask ROM of the present invention is manufactured in the following processes; forming a cell array in which all the cells will be driven as on-cells, forming a groove by etching some portions of the semiconductor substrate in the drain region of the specific on-cell among the on-cells on customer's request, and then practicing a source and drain ion implantation process.
REFERENCES:
patent: 4997777 (1991-03-01), Boivin
patent: 5149667 (1992-09-01), Choi
patent: 5278089 (1994-01-01), Nakagawara
Chaudhari Chandra
Hyundai Electronics Industries Co,. Ltd.
LandOfFree
Method of making a mask ROM with a groove does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a mask ROM with a groove, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a mask ROM with a groove will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-705319