Method of making a mask ROM

Details Method of making a mask ROM Method of making a mask ROM

1998-01-05

1999-12-28

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438130, H01L 218246

Patent

active

060080930

ABSTRACT:
A semiconductor device fabrication method is provided which comprises the steps of: (i) forming a plurality of high concentration diffusion layers of a second conductivity in a semiconductor substrate; (ii) forming a plurality of first gate electrodes extending perpendicularly to the high concentration diffusion layers of the second conductivity on the semiconductor substrate with a first gate insulating film interposed therebetween; (iii) implanting ions of a first conductivity into surface portions of the semiconductor substrate for device isolation by using the first gate electrodes as a mask; (iv) forming side wall spacers on side walls of the first gate electrodes; (v-i) implanting ions of the second conductivity into surface portions of the semiconductor substrate for formation of channel regions by using the first gate electrodes and the side wall spacers as a mask; (vi-i) forming a plurality of second gate electrodes on the ion-implanted channel regions between the first gate electrodes; and (vii) implanting ions of the first conductivity again into surface portions of the semiconductor substrate by using the first gate electrodes and the second gate electrodes as a mask for device isolation.

REFERENCES:
patent: 5278078 (1994-01-01), Kanebako et al.
patent: 5773336 (1998-06-01), Gu
patent: 5866456 (1999-02-01), Abe

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