Method of making a low power, high performance junction transist

Details Method of making a low power, high performance junction transist Method of making a low power, high performance junction transist

1995-03-31

1997-04-22

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

438283, 438291, 438195, H01L 21265

Patent

active

056228805

ABSTRACT:
Low threshold voltage MOS devices having buried electrodes are disclosed herein. Such devices have source and drain regions which include tip regions and plug regions. The buried electrodes have bottom boundaries located above the bottoms of the plug regions. The buried electrode has the same conductivity type as the device's bulk (albeit at a higher dopant concentration) and, of course, the opposite conductivity type as the device's source and drain. The exact dopant concentrations and locations of the buried electrodes should be provided such that punch through is avoided in MOS devices.

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