Method of making a fully-dielectric-isolated fet

Details Method of making a fully-dielectric-isolated fet Method of making a fully-dielectric-isolated fet

1995-06-07

1998-06-30

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438489, 438300, 438295, H01L 2100

Patent

active

057733287

ABSTRACT:
A field-effect transistor structure wherein a single patterned thin film semiconductor layer: is monocrystalline, and epitaxially matched to and dielectrically isolated from an underlying body region, in channel locations; and is polycrystalline in source/drain locations which abut said channel locations.

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