Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1993-09-29
1997-05-06
Breneman, R. Bruce
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
H01L 3118, H01L 21265
Patent
active
056270887
ABSTRACT:
A photoelectric conversion device having a photoelectric conversion section and a transistor for transferring or amplification of the photoelectric conversion signal or an accumulating section of a photo carrier. The photoelectric conversion section and the transistor or the accumulating section have common semiconductor layer.
REFERENCES:
patent: 4788157 (1988-11-01), Nakamura
patent: 4918494 (1990-04-01), Koden et al.
patent: 4935792 (1990-06-01), Tanaka et al.
patent: 5053347 (1991-10-01), Wu
patent: 5075237 (1991-12-01), Wu
patent: 5137841 (1992-08-01), Takeda et al.
Fukaya Masaki
Gofuku Ihachiro
Hatanaka Katsunori
Isobe Yoshinori
Itabashi Satoshi
Breneman R. Bruce
Canon Kabushiki Kaisha
Paladugu Ramamohan Rao
LandOfFree
Method of making a device having a TFT and a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a device having a TFT and a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a device having a TFT and a capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2132157