Method of making a contact in a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S636000, C438S692000, C438S736000, C257SE21585

Reexamination Certificate

active

07985676

ABSTRACT:
To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask.

REFERENCES:
patent: 4470189 (1984-09-01), Roberts et al.
patent: 4799990 (1989-01-01), Kerbaugh et al.
patent: 5024971 (1991-06-01), Baker et al.
patent: 5510216 (1996-04-01), Calabrese et al.
patent: 5834159 (1998-11-01), Stolmeijer
patent: 6177304 (2001-01-01), Li et al.
patent: 6221777 (2001-04-01), Singh et al.
patent: 6277544 (2001-08-01), Singh et al.
patent: 6376298 (2002-04-01), Li et al.
patent: 6448140 (2002-09-01), Liaw
patent: 6867116 (2005-03-01), Chung
patent: 7151055 (2006-12-01), Aminpur et al.
patent: 2002/0137350 (2002-09-01), Endoh et al.
patent: 2005/0098091 (2005-05-01), Babich et al.
patent: 2005/0221612 (2005-10-01), Brown et al.
patent: 2006/0286793 (2006-12-01), Lin et al.
patent: 2007/0054486 (2007-03-01), Yang
patent: 2007/0141834 (2007-06-01), Kwon et al.
patent: 0 288 739 (1988-11-01), None
Kurihara, K., et al., “Electron beam nanolithography with image reversal by ECR plasma oxidation,” Microelectronic Engineering, vol. 27 (1995), pp. 125-128, Elsevier Science B.V.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of making a contact in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a contact in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a contact in a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2681826

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.