Method of making a contact for contacting an impurity region for

Details Method of making a contact for contacting an impurity region for Method of making a contact for contacting an impurity region for

1997-03-31

1999-03-23

Niebling, John F.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438242, 438243, 438246, 438249, 438386, 438389, 438392, H01L 218242

Patent

active

058858636

ABSTRACT:
A method for forming a contact is disclosed. A buried impurity region of a second conductivity type is formed in a semiconductor substrate of a first conductivity type. First and second well regions of a first and second conductivity types, respectively, are also formed in the semiconductor substrate. The second well region overlaps the first well region and contacts and surrounds the buried impurity region. A surface impurity concentration of the first well region is greater than a surface impurity concentration of the second well region. A contact to the second well region is formed.

REFERENCES:
patent: 4116720 (1978-09-01), Vinson
patent: 4658283 (1987-04-01), Koyama
patent: 4791610 (1988-12-01), Takemae
patent: 4801989 (1989-01-01), Taguchi
patent: 4829017 (1989-05-01), Malhi
patent: 4845537 (1989-07-01), Nishimura et al.
patent: 4889492 (1989-12-01), Barden et al.
patent: 4918502 (1990-04-01), Kaga et al.
patent: 4999783 (1991-03-01), Hsu
patent: 5021852 (1991-05-01), Sukegawa et al.
patent: 5034341 (1991-07-01), Itoh
patent: 5045904 (1991-09-01), Kobayashi et al.
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5079615 (1992-01-01), Yamazaki et al.
patent: 5185284 (1993-02-01), Motonami
patent: 5213999 (1993-05-01), Sparks et al.
patent: 5250829 (1993-10-01), Bronner et al.
patent: 5264716 (1993-11-01), Kenney
patent: 5336912 (1994-08-01), Ohtsuki
patent: 5343354 (1994-08-01), Lee et al.
patent: 5348905 (1994-09-01), Kenney
patent: 5362663 (1994-11-01), Bronner et al.
patent: 5384474 (1995-01-01), Park et al.
patent: 5400278 (1995-03-01), Kunori et al.
patent: 5414285 (1995-05-01), Nishihara
patent: 5432365 (1995-07-01), Chin et al.
patent: 5521115 (1996-05-01), Park et al.
patent: 5665622 (1997-09-01), Muller et al.

Affiliated with

Also associated with

Rating

Method of making a contact for contacting an impurity region for does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a contact for contacting an impurity region for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a contact for contacting an impurity region for will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2124590