Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-05
2006-09-05
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C257S737000, C257S738000, C257S779000, C257S780000, C257SE23021, C257SE23023, C257SE23069
Reexamination Certificate
active
07101782
ABSTRACT:
A circuitized substrate and a method of making the circuitized substrate are provided. The circuitized substrate includes a substrate having a conductive pad thereon. A first layer of solder enhancing material is positioned on the conductive pad, the first layer of solder enhancing material includes a first region and a second region positioned relative to the first region. A solder member is positioned on the first region of the first layer of solder enhancing material. A second layer of solder enhancing material is positioned on the solder member and on a portion of the second region of the first layer of solder enhancing material. The circuitized substrate may be used in the fabrication of an electronic package.
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EEP-vol. 26-2, Advances in Electronic Packaging—1999, “Selection of a No-Clean Flux for Flip Chip Applications”, J.D. Poole et al., Solectron Corporation, Charlotte, N.C., pp. 1355-1362.
Gosselin Timothy A.
Mead Donald I.
Driggs, Hogg & Fry Co. LPA
Hogg William N.
Thai Luan
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