Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-13
2008-11-11
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S253000, C438S381000, C438S393000, C257SE21008
Reexamination Certificate
active
07449381
ABSTRACT:
A method of forming a capacitive substrate in which at least one capacitive dielectric layer of material is screen or ink jet printed onto a conductor and the substrate is thereafter processed further, including the addition of thru-holes to couple selected elements within the substrate to form at least two capacitors as internal elements of the substrate. The capacitive substrate may be incorporated within a larger circuitized substrate, e.g., to form an electrical assembly. A method of making an information handling system including such substrates is also provided.
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Das Rabindra N.
Lauffer John M.
Lin How T.
Markovich Voya R.
Endicott Interconect Technologies, Inc.
Fraley Lawrence R.
Hinman, Howard & Kattell
Lee Hsien-ming
Levy Mark
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