Method of making a capacitance type acceleration sensor

Details Method of making a capacitance type acceleration sensor Method of making a capacitance type acceleration sensor

1996-09-23

1997-10-14

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 33, 437927, 437228SEN, B44C 122, H01L 2100

Patent

active

056768516

ABSTRACT:
A capacitance acceleration sensor and method of making same are disclosed. A capacitance acceleration sensor includes a movable electrode etched from a silicon plate which is clamped between two solid dielectric plate members of glass, silicon oxides, or oxygen oxides. Static electrodes are secured to surfaces of the dielectric members facing opposite the movable electrode, thereby providing easy manufacturing assessibility for leadout wires from these electrodes. In certain embodiments, the movable electrode is formed integrally with a monocrystalline silicon plate member which also contains an integrated circuit for generating an output acceleration signal in response to movement of the movable electrode when the assembly experiences acceleration forces.

REFERENCES:
patent: 4783237 (1988-11-01), Aine et al.
patent: 5095570 (1992-03-01), Suzuki et al.
patent: 5389198 (1995-02-01), Koide et al.
patent: 5417312 (1995-05-01), Tsuchitani

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