Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-21
2009-02-03
Smith, Zandra (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S775000, C438S776000, C438S777000, C438S627000, C438S643000, C438S653000, C257S751000, C257SE23160, C257SE21584
Reexamination Certificate
active
07485516
ABSTRACT:
A method of formation of integrated circuit devices includes forming a gate electrode stack over a portion of a semiconductor. The stack includes a gate dielectric layer with a gate electrode thereabove. Implant diatomic nitrogen and/or nitrogen atoms into the substrate aside from the stack at a maximum energy less than or equal to 10 keV for diatomic nitrogen and at a maximum energy less than or equal to 5 keV for atomic nitrogen at a temperature less than or equal to 1000° C. for a time of less than or equal to 30 minutes. Then form silicon oxide offset spacers on sidewalls of the stack. Form source/drain extension regions in the substrate aside from the offset spacers. Form nitride sidewall spacers on outer surfaces of the offset spacers over another portion of the nitrogen implanted layer. Then form source/drain regions in the substrate aside from the sidewall spacers.
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Dyer Thomas W.
Li Jinhong
Luo Zhijiong
International Business Machines - Corporation
Jones II Graham S.
McCall Shepard Sonya D
Schnurmann H. Daniel
Smith Zandra
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