Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-28
2006-02-28
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S427000, C257SE27064
Reexamination Certificate
active
07005339
ABSTRACT:
The present invention provides a method of integrating at least one high voltage metal oxide semiconductor device and at least one Submicron metal oxide semiconductor device on a substrate. The method comprises: providing the substrate, forming a plurality of shallow trenches having different depths on a surface of the substrate, and forming a plurality of silicon oxide layers filling up the shallow trenches, and a top of each of the silicon oxide layers being in the shape of a mushroom.
REFERENCES:
patent: 2001/0036705 (2001-11-01), Nishida et al.
patent: 2004/0058508 (2004-03-01), Parat et al.
patent: 2004/0147090 (2004-07-01), Kim et al.
patent: 2005/0090049 (2005-04-01), Abadeer et al.
Chen Rong-Ching
Huang Ching-Chun
Huang Ming-Hsien
Lin Jy-Hwang
Fourson George
Hsu Winston
Pham Thanh V.
United Microelectronics Corp.
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