Method of increasing transistor drive current by recessing...

Details Method of increasing transistor drive current by recessing... Method of increasing transistor drive current by recessing...

2007-01-05

2010-02-09

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S435000, C257SE21628

Reexamination Certificate

active

07659170

ABSTRACT:
By recessing the isolation structure of a transistor prior to silicidation, the series resistance may be reduced due to the increased amount of metal silicide formed in the vicinity of the isolation structure. By recessing the isolation structure prior to the formation of the gate electrode, an increased degree of poly wrap around may be obtained, thereby increasing the effective channel width.

REFERENCES:
patent: 6159823 (2000-12-01), Song et al.
patent: 6232640 (2001-05-01), Okada et al.
patent: 6245637 (2001-06-01), Tsai
patent: 2005/0127468 (2005-06-01), Ito
patent: 2006/0001108 (2006-01-01), Yamamoto
patent: 2006/0121688 (2006-06-01), Ko et al.

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