Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Reexamination Certificate
2007-01-22
2009-02-03
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
C438S057000, C257SE21133, C257SE21347, C257SE21134, C257SE21135
Reexamination Certificate
active
07485554
ABSTRACT:
A method of selectively heating a predetermined region of a semiconductor substrate includes providing a semiconductor substrate, selectively focusing a free carrier generation light on only a predetermined region of the semiconductor substrate, irradiating the free carrier generation light on the predetermined region of the semiconductor substrate to increase a free carrier concentration within the predetermined region of the semiconductor substrate, wherein the free carrier generation light causes the predetermined region to increase in temperature by less than a temperature necessary to change the solid phase of the predetermined region, and irradiating the semiconductor substrate with a heating light to selectively heat the predetermined region of the semiconductor substrate.
REFERENCES:
patent: 4155779 (1979-05-01), Auston et al.
patent: 4234356 (1980-11-01), Auston et al.
patent: 5319655 (1994-06-01), Thornton
patent: 6027989 (2000-02-01), Poole et al.
patent: 6514784 (2003-02-01), Dubowski
patent: 6818485 (2004-11-01), Morosawa
patent: 7176049 (2007-02-01), Buh et al.
patent: 03-266424 (1991-11-01), None
Aubin, et al., Proc. of SPIE vol. 5116, pp. 531-535 (2003) Entitled: “Laser Annealing for high-Q MEMS Resonators”.
Liu, et al., J. Appl. Phys. 62(3):1006-1009, (Aug. 1, 1987) Entitled: Theoretical approach to the optimal preheating temperature for cw CO2 laser annealing of semiconductors.
Celler, et al., J. Appl. Phys. 50(11): 7264-7266 (Nov. 1979) Entitled: “cw infrared laser annealing of ion-implanted silicon”.
Kim, et al., IEEE Transactions on Electron Devices, 49(10):1748-1754 (Oct. 2002) Entitled: “Advanced source/drain engineering for box-shaped ultrashallow junction formation using laser annealing and pre-amorphization implantation in sub-100-nm SOI CMOS”.
Park, K.C., et al., IEDM 22.5.1 pp. 573-576, IEEE (2000) Entitled: Junction defects of self-aligned, excimer-laser-annealed poly-Si TFTs.
Zheng, M., et al., Applied Physics Letters, 79(16):2606-2608 (Oct. 15, 2001) Entitled: Magnetic nanodot arrays produced by direct laser interference lithography.
Shtyrkov, et al., Sov. Phys. Semicond., 9(10):1309-1310, (1976) Entitled: Local laser annealing of implantation doped semiconductor layers.
Sze, S.M., Physics of Semiconductor Devices, (Physics and Properties of Semiconductors—date Unknown A Resume—Carrier Concentration at Thermal Equilibrium) pp. 16-20 & 748-751.
Falk, R. Aaron, OptoMetrix, Inc., Renton, Washington, pp. 1-7 date unknown Entitled: Near IR absorption in heavily doped silicon—an empirical approach.
Optical Properties of Silicon—Si—Silicon—Optical properties (3 pages) date unknown Webpage http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/optic.html.
Buh Gyoung Ho
Hyun Sang-jin
Shin Yu Gyun
Yahng Ji-Sang
Yon Guk-Hyon
Lee & Morse P.C.
Nhu David
Samsung Electronics Co,. Ltd.
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