Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-08
2005-03-08
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S761000, C438S763000, C438S765000
Reexamination Certificate
active
06864141
ABSTRACT:
A method of making a thin gate dielectric includes providing a metal silicate on a silicon substrate. Nitrogen is implanted into the metal silicate.
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Hornback Verne C.
Kimball James P.
Lo Wai
Lebentritt Michael
LSI Logic Corporation
Maginot, Moorge & Beck
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