Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-19
2000-04-25
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438648, H01L 214763
Patent
active
060543825
ABSTRACT:
A method is provided for improving the texture of a metal interconnect (32) in a semiconductor device (10). A first layer of titanium (24), a layer of titanium nitride (26), a second layer of titanium (28), and a metal film (30) are sequentially formed over an oxide layer (12). The second titanium layer (28) is preferably out 10-20 nm thick. Because the metal film (30) is formed over the second titanium layer (28), any metal interconnect (32) that is formed as a part of the metal film (30) has a strong (111) crystalline orientation. Furthermore, because the second titanium layer (28) is relatively thin, the metal film (30) and metal interconnect (32) are not completely transformed into a metal compound having a high electrical resistance.
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Hong Qi-Zhong
Hsu Wei-Yung
Brady Wade James
Donaldson Richard L.
Garner Jacqueline J.
Lebentritt Michael S.
Niebling John F.
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