Method of improving stability in low k barrier layers

Details Method of improving stability in low k barrier layers Method of improving stability in low k barrier layers

2006-05-23

2006-05-23

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000

Reexamination Certificate

active

07049249

ABSTRACT:
A method is provided for processing a substrate including providing a processing gas comprising hydrogen gas and an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as a barrier layer in damascene or dual damascene applications with low k dielectric materials.

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