Method of improving refresh time in DRAM products

Details Method of improving refresh time in DRAM products Method of improving refresh time in DRAM products

1997-04-17

2000-06-20

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438660, 438669, 438618, 438621, 438625, 438629, 438637, H01L 2144

Patent

active

060777788

ABSTRACT:
An improved and new method for forming a metal conductor interconnection structure on a semiconductor substrate containing DRAM devices has been developed. The method utilizes a thermal anneal in a flowing gas mixture of nitrogen and hydrogen following patterning of the metal conductor interconnection structure and results in DRAM devices having improved mean refresh time (time between refresh cycles).

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