Method of implanting a substrate and an ion implanter for...

Details Method of implanting a substrate and an ion implanter for... Method of implanting a substrate and an ion implanter for...

2006-05-23

2006-05-23

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

By application of corpuscular or electromagnetic radiation

Reexamination Certificate

active

07049210

ABSTRACT:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

REFERENCES:
patent: 4421988 (1983-12-01), Robertson et al.
patent: 4736107 (1988-04-01), Myron
patent: 4761559 (1988-08-01), Myron
patent: 4922106 (1990-05-01), Berrian et al.
patent: 5389793 (1995-02-01), Aitken et al.
patent: 5898179 (1999-04-01), Smick et al.
patent: 1306879 (2003-05-01), None
patent: 7-240388 (1995-09-01), None
patent: WO 2003/088299 (2003-10-01), None

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