Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-06-28
2011-06-28
Roman, Angel (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S057000, C438S423000, C438S434000, C438S449000, C438S450000, C257SE21551
Reexamination Certificate
active
07968424
ABSTRACT:
Provided is a method of implanting dopant ions to an integrated circuit. The method includes forming a first pixel and a second pixel in a substrate, forming an etch stop layer over the substrate, forming a hard mask layer over the etch stop layer, patterning the hard mask layer to include an opening between the first pixel and the second pixel, and implanting a plurality of dopants through the opening to form an isolation feature.
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Chen Pao-Tung
Chuang Chun-Chieh
Hung Jyh-Ming
Lin Jeng-Shyan
Liu Jen-Cheng
Haynes and Boone LLP
Roman Angel
Taiwan Semiconductor Manufacturing Company , Ltd.
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