Method of high voltage operation of a field effect transistor

Details Method of high voltage operation of a field effect transistor Method of high voltage operation of a field effect transistor

2008-09-12

2010-10-19

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000

Reexamination Certificate

active

07816212

ABSTRACT:
A high voltage operating field effect transistor has a substrate and a semiconductor channel formation region disposed in a surface of the substrate. A source region and a drain region are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region. A gate insulating film region is disposed on the semiconductor channel formation region. A resistive gate region is disposed on the gate insulating film region. A source side electrode is disposed on a source region side of the resistive gate region and is operative to receive a signal electric potential. A drain side electrode is disposed on a drain region side of the resistive gate region and is operative to receive a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential.

REFERENCES:
patent: 3999210 (1976-12-01), Yamada
patent: 4141023 (1979-02-01), Yamada
patent: 5208477 (1993-05-01), Kub

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