Method of high density plasma etching for semiconductor manufact

Details Method of high density plasma etching for semiconductor manufact Method of high density plasma etching for semiconductor manufact

1996-11-19

1998-07-21

Tung, T.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345MG, 156345P, 1566431, 1566461, 216 74, 216 79, H01L 2102

Patent

active

057831009

ABSTRACT:
An improved method of high density plasma etching for etching substrates such as semiconductor wafers is provided. The method includes controlling the ratio of ions to neutrals in a high density plasma using an ion filter located in the flow path of the plasma. The ion filter is adapted to interrupt and deflect ions in the plasma while allowing neutrals to pass through to the substrate unaffected. This helps to prevent notching because a more favorable ion
eutral ratio is present at the substrate. At the same time etch selectivity is high, particularly for etching polysilicon to oxide, because current density can remain high.

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Nozawa, T. et al., "ECR Plasma Etching of N+ Polysilicon Gate", Abstract No. 245, Electrochemical Society Meeting, San Franciso, CA 1993, month unavailabel pp. 356-357.

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